april 1998 f dr4410 n -channel enhancement mode field effect transistor general description features absolute maximum ratings t a = 25 o c unless otherwise noted symbol parameter f dr4410 units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d drain t current - continuous (note 1a) 9.3 a - pulsed 40 p d maximum power dissipation (note 1a) 1.8 w (note 1b) 1 (note 1c) 0.9 t j ,t stg operating and storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 70 c/w r q jc thermal resistance, junction-to-case (note 1) 20 c/w fdr 4410 rev.c 9.3 a, 30 v. r ds(on ) = 0.013 w @ v gs = 10 v r ds(on ) = 0.020 w @ v gs = 4.5 v. high density cell design for extremely low r ds(on) . proprietary supersot tm -8 small outline surface mount package with high power and current handling capability . the FDR4410 has been designed as a smaller, low cost alternative to the popular si4410dy. the supersot tm -8 package is 40% smaller than the so-8 package. the supersot tm -8 advanced package design and optimiz ed pinout allow the typical power dissipation to be similar to the bigger so-8 package . sot-23 supersot t m -8 soic-16 so-8 sot-223 supersot t m -6 d s d d s d d g supersot -8 tm pin 1 4410 1 5 6 7 8 4 3 2 ? 1998 fairchild semiconductor corporation
electrical characteristics (t a = 25 o c unless otherwise noted ) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 30 v d bv dss / d t j breakdown voltage temp. coefficient i d = 250 a , referenced to 25 o c 35 mv/ o c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a t j = 5 5c 25 a i gss gate - body leakage current v gs = 20 v, v ds = 0 v 100 na i gss gate - body leakage, reverse v gs = -20 v, v ds = 0 v -100 na on characteristics (note 2) v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.5 2 v d v gs(th) / d t j gate threshold voltage temp.coefficient i d = 250 a , referenced to 25 o c -4.4 mv/ o c r ds(on) static drain-source on-resistance v gs = 10 v, i d = 9.3 a 0.011 0.013 w t j =12 5c 0.017 0.02 v gs = 4.5 v, i d = 5 a 0.016 0.02 i d(on) on-state drain current v gs = 10 v, v ds = 5 v 20 a g fs forward transconductance v ds = 10 v, i d = 9.3 a 25 s dynamic characteristics c iss input capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 1170 pf c oss output capacitance 627 pf c rss reverse transfer capacitance 180 pf switching ch aracteristics (note 2 ) t d(on ) turn - on delay time v dd = 25 v, i d = 1 a, v gs = 10 v, r gen = 6 w 12 22 ns t r turn - on rise time 11 20 ns t d(off) turn - off delay time 41 66 ns t f turn - off fall time 34 55 ns q g total gate charge v ds = 15 v, i d = 9.3 a, v gs = 10 v 36 50 nc q gs gate-source charge 4.5 nc q gd gate-drain charge 10 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current 1.5 a v sd drain-source diode forward voltage v gs = 0 v, i s = 1.5 a (note 2 ) 0.72 1.2 v notes: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. r q ja shown below for single device operation on fr-4 board in still air. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. fdr 4410 rev.c b. 125 o c/w on a 0.026 in 2 of pad of 2oz copper. a . 70 o c/w on a 1 in 2 pad of 2oz copper. c . 135 o c/w on a 0.005 in 2 of pad of 2oz copper.
fdr 4410 rev.c 0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 v , drain-source voltage (v) i , drain-source current (a) v = 10v gs ds d 6.0 4.5 3.5 4.0 3.0 5.0 0 10 20 30 40 50 0.5 1 1.5 2 2.5 3 i , drain current (a) drain-source on-resistance v = 3.5v gs d r , normalized ds(on) 10 4.5 5.0 4.0 6.0 typical electrical characteristics figure 1. on-region characteristics . figure 2. on-resistance variation with drain current and gate voltage . -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 t , junction temperature (c) drain-source on-resistance j r , normalized ds(on) v =10v gs i =9.3a d figure 3. on-resistance variation with temperature . 1 1.5 2 2.5 3 3.5 4 4.5 5 0 10 20 30 40 50 v , gate to source voltage (v) i , drain current (a) v = 10v ds gs d t = -55c j 125c 25c figure 5 . transfer characteristics. 0 0.3 0.6 0.9 1.2 1.5 0.0001 0.001 0.01 0.1 1 10 50 v , body diode forward voltage (v) i , reverse drain current (a) t = 125c j 25c -55c v = 0v gs sd s 2 4 6 8 10 0 0.01 0.02 0.03 0.04 0.05 0.06 v , gate to source voltage (v) i = 5a d gs r , on-resistance (ohm) ds(on) t = 25c a t = 125c a figure 4 . on-resistance variation with gate-t o -source voltage. figure 6 . body diode forward voltage varia tion with source current and temperature.
fdr 4410 rev.c typical electrical characteristics (continued) figure 9 . maximum safe operating area. 0 10 20 30 40 0 2 4 6 8 10 q , gate charge (nc) v , gate-source voltage (v) v =10v ds g gs 20v i = 9.3a d 15v figure 7 . gate charge characteristics . 0.1 0.2 0.5 1 3 5 10 30 50 0.01 0.03 0.1 0.5 1 5 20 80 v , drain-source voltage (v) i , drain current (a) rds(on) limit d a dc ds 1s 100ms 10ms 1ms 10s v = 10v single pulse r = see note 1c t = 25c q ja gs a 100s figure 10 . single pulse maximum power dissipation. 0.0001 0.001 0.01 0.1 1 10 100 300 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 t , time (sec) transient thermal resistance 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t / t 1 2 r (t) = r(t) * r r = see note 1c q ja q ja q ja t - t = p * r (t) q ja a j p(pk) t 1 t 2 r(t), normalized effective figure 11 . transient thermal response curve . thermal characterization performed using the conditions described in note 1c . transient thermal response will change depending on the circuit board design. 0.1 0.2 0.5 1 2 5 10 20 30 100 200 300 500 1000 2000 3000 v , drain to source voltage (v) capacitance (pf) ds c iss f = 1 mhz v = 0 v gs c oss c rss figure 8 . capacitance characteristics . 0.0001 0.001 0.01 0.1 1 10 100 300 0 10 20 30 40 50 single pulse time (sec) power (w) single pulse r =see note 1c t = 25c q ja a
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